BAW101E6433HTMA1

Overview

The BAW101E6433HTMA1 is a silicon switching diode from Infineon Technologies, housed in an SOT143 package. It features parallel-connected diodes with a maximum reverse voltage of 300 V and a forward current rating of 250 mA. The device supports a peak forward current of 500 mA and a surge current of 4.5 A. Total power dissipation is rated at 350 mW, with a junction temperature limit of 150 °C. Electrical characteristics include a typical reverse recovery time of 1 µs and a maximum forward voltage of 1.3 V at 100 mA.

Feature Summary

• Electrically insulated high-voltage medium-speed diodes
• Pb-free RoHS compliant package
• Qualified according to AEC Q101

Applications

• High-voltage switching circuits
• Medium-speed rectification applications
• General purpose diode arrays

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and marking details. Confirm compliance requirements such as RoHS status and AEC-Q101 qualification directly with manufacturer datasheets before integration into designs.

Selection Notes

Select this component for applications requiring parallel diode configurations within a compact SOT143 footprint. Ensure thermal management accommodates the 350 mW power dissipation limit and verify that the 300 V reverse voltage rating exceeds circuit operating conditions.

Part Context

This part belongs to the BAW101 series of silicon switching diodes manufactured by Infineon Technologies. The series provides electrically insulated high-voltage options suitable for robust electronic designs requiring reliable medium-speed performance in surface-mount packages.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers within the BAW101 series or equivalent high-voltage parallel diode arrays.