SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BAW156HYT116 is a low-leakage switching diode manufactured by ROHM Semiconductor, housed in an SOT-23-3 surface-mount package. It features a dual common-anode configuration designed for high-speed signal processing applications. Key electrical specifications include a peak reverse voltage of 100 V and a maximum forward current of 215 mA. The device exhibits a typical reverse recovery time of 3 microseconds and a maximum reverse leakage current of 5 nA at 80 V. With a power dissipation rating of 250 mW and a maximum operating temperature of +150°C, it supports reliable operation in compact electronic circuits requiring efficient rectification and switching.
Verify the complete part number including the suffix to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure design compatibility with the specified SOT-23 footprint and thermal management requirements for the intended operating environment.
Select this component when low leakage current and moderate speed are required in a small form factor. Compare against alternatives like the BAV99 if faster switching speeds are necessary, noting the difference in recovery times. Ensure the circuit voltage does not exceed the 100 V peak reverse rating and that thermal constraints align with the 250 mW dissipation limit.
This component belongs to ROHM's discrete semiconductor diode portfolio, specifically within the switching diode category. It shares the SOT-23-3 package family with other ROHM devices such as the BAV99 and BAW56 series. The product is designed for surface-mount technology assembly, supporting automated manufacturing processes in modern electronics production lines.
The BAW156HMFH is listed as a similar level replacement with the same pinout and package, though it carries a 'not recommended for new designs' status. Verify functional equivalence regarding reverse recovery time and leakage current before substitution.