Diode Arrays BAW56HDWQ-13 product image

BAW56HDWQ-13

$0.22
  • Description:DIODE ARRAY GP 100V 200MA SOT363
  • Series:-

SKU:0907c6baed71 Category: Brand:

  
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BAW56HDWQ-13 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE ARRAY GP 100V 200MA SOT363. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BAW56HDWQ-13

  • Description:DIODE ARRAY GP 100V 200MA SOT363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:2.5 µA @ 75 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for BAW56HDWQ-13

BAW56HDWQ-13

Diode Arrays Overview

The BAW56HDWQ-13 is a surface mount switching diode array manufactured by Diodes Incorporated. It integrates two common anode circuits within a single SOT363 package. The device features a peak repetitive reverse voltage of 100 V and a forward continuous current rating of 250 mA per element. Electrical characteristics include a maximum reverse recovery time of 4.0 ns, a total capacitance of 1.5 pF, and a power dissipation capacity of 350 mW. The component operates within a temperature range of -65°C to +150°C.

Diode Arrays Feature Summary

  • Integrates two independent switching diode circuits into a compact SOT363 package
  • Qualified to AEC-Q101 standards for automotive high reliability applications
  • Provides fast switching speed with low leakage current and low capacitance
  • Manufactured using lead-free, halogen-free, and antimony-free green materials

Diode Arrays Applications

  • Automotive electronic systems requiring high-reliability switching components
  • General purpose signal processing and rectification in surface mount designs
  • High-speed switching circuits in consumer electronics and industrial equipment

Diode Arrays Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the procurement channel is authorized by Diodes Incorporated to ensure product authenticity and compliance with quality standards. Check for any recent Product Change Notifications (PCN) regarding manufacturing site or material updates before finalizing orders.

Diode Arrays Selection Notes

Select this component when a dual common anode switching diode is required in a minimal footprint SOT363 package. Ensure the application voltage does not exceed the 100 V peak repetitive reverse voltage rating. Verify that the circuit design accommodates the 350 mW total power dissipation limit and the specified thermal resistance values for the intended ambient temperature conditions.

Diode Arrays Part Context

This part belongs to the BAW56H series of surface mount switching diode arrays from Diodes Incorporated. It is specifically designed for automotive applications, meeting AEC-Q101 qualification requirements. The 'HDWQ' designation indicates the specific internal circuit configuration, package type, and automotive-grade reliability standards compared to standard commercial variants.

Diode Arrays Replacement Considerations

BAW56HDWQ

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 4 A at a pulse duration of 1.0 µs.

Is the BAW56HDWQ-13 suitable for automotive applications?

Yes, the component is qualified to AEC-Q101 standards and is PPAP capable for automotive use.

What is the typical reverse recovery time for this diode array?

The typical reverse recovery time is 4.0 ns under test conditions of IF = IR = 10mA.

BAW56HDWQ-13BAW56HDWQ-13
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