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The BAW62,113 is a high-speed switching diode manufactured by NXP USA Inc. It utilizes planar technology and is encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package, identified as ALF2. The component features a maximum reverse voltage of 75 V and a forward current rating of 250 mA. Key electrical characteristics include a fast recovery time of 4 ns and a maximum forward voltage drop of 1 V at 100 mA. This device is designed for efficient switching performance in general-purpose applications.
Verify the specific ordering suffix and package type when sourcing replacements, as availability may vary. Confirm compliance with environmental directives such as RoHS and REACH if required for your assembly process. Check official manufacturer documentation for the most current status, as this part number may be obsolete or subject to change. Ensure the supplier provides valid traceability and authenticity guarantees for critical electronic components.
Select this component for applications requiring fast recovery times and robust hermetic sealing in a standard DO-35 form factor. Consider the 75 V reverse voltage and 250 mA forward current limits to ensure adequate headroom for your circuit design. Evaluate the thermal management requirements based on the specified forward voltage drop at operating currents. Compare against alternative high-speed diodes if space constraints or specific voltage ratings differ from these specifications.
The BAW62 series represents a line of high-speed switching diodes produced by NXP Semiconductors. These devices are fabricated using planar technology to ensure consistent performance and reliability. The BAW62,113 variant specifically denotes the version packaged in the ALF2 (SOD27/DO-35) leaded glass housing. This family is commonly utilized in consumer electronics and industrial equipment where compact, reliable switching elements are necessary.
Official substitute part numbers are not explicitly confirmed in the provided source material. Verify compatibility with generic DO-35 high-speed diodes having matching 75 V reverse voltage and 4 ns recovery time specifications.