SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BAW62,133 is a high-speed switching diode manufactured by NXP USA Inc., fabricated using planar technology. It is encapsulated in the hermetically sealed leaded glass ALF2 (SOD27/DO-35) package. The component is rated for a maximum repetitive peak reverse voltage of 75 V and an average forward rectified current of 250 mA. It features a fast recovery time of 4 ns and a maximum forward voltage drop of 1 V at specified current levels.
Verify the specific ordering suffix to ensure correct packaging configuration. Confirm RoHS3 compliance status as required by project specifications. Cross-reference the manufacturer part number with official NXP documentation to validate authenticity and technical parameters before procurement.
Select this component when a fast recovery diode with a 75 V rating is required. Ensure the circuit design accommodates the 250 mA current limit. Verify that the through-hole ALF2 package fits the board layout constraints. Consider thermal management requirements based on the expected operating conditions.
This component belongs to the BAW series of high-speed diodes from NXP Semiconductors. The series offers various voltage ratings and packages tailored for different switching applications. The BAW62 variant specifically targets general-purpose high-speed needs within its voltage and current capabilities.
BAW62,143 serves as a verified substitute with identical electrical ratings and fast recovery characteristics. Both parts maintain the same 75 V rating and 4 ns recovery time. Verify package compatibility and RoHS3 compliance when substituting.