SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BAW76-TAP is a small signal fast switching diode manufactured by Vishay Semiconductors. It utilizes silicon epitaxial planar technology and is housed in the DO-35 (DO-204AH) axial leaded package. The device features a repetitive peak reverse voltage of 75 V and a forward continuous current rating of 300 mA. Key electrical characteristics include a maximum reverse recovery time of 4 ns, a typical junction-to-ambient thermal resistance of 350 K/W, and a breakdown voltage of 75 V at 5 μA. The component supports a storage temperature range from -65 °C to +175 °C.
Verify that the ordering suffix matches the required packaging format. The TAP designation indicates availability in an ammopack configuration. Confirm compliance requirements against specific project standards. Ensure the component meets the necessary environmental specifications for the intended operating conditions before finalizing procurement orders.
Select this component when extreme fast switching capabilities are required within a standard axial leaded package. The low capacitance and rapid reverse recovery make it appropriate for high-frequency environments. Evaluate the thermal resistance and power dissipation limits relative to the expected load conditions to ensure reliable operation under specified ambient temperatures.
This part belongs to the Vishay BAW series of small signal fast switching diodes. These components are engineered for applications demanding rapid transition times and efficient signal handling. The DO-35 package provides a standardized footprint compatible with through-hole mounting processes commonly used in general-purpose electronic assemblies.
Consult official Vishay documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before implementing any alternative components in existing designs.