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Product Detailed Parameters
- Description：DIODE AVALANCHE 90V 400MA DO35
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Technology：Avalanche
- Voltage - DC Reverse (Vr) (Max)：90 V
- Current - Average Rectified (Io)：400mA
- Voltage - Forward (Vf) (Max) @ If：1.25 V @ 400 mA
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：50 ns
- Current - Reverse Leakage @ Vr：100 nA @ 90 V
- Capacitance @ Vr, F：35pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-35
- Operating Temperature - Junction：-65°C ~ 200°C
- Grade：-
- Qualification：-
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Overview
The BAX12 is a controlled avalanche diode manufactured by Central Semiconductor Corp using an epitaxial planar process and hermetically sealed in a DO-35 glass package. It features a peak repetitive reverse voltage of 90 V and a continuous reverse voltage of 90 V. The device supports a continuous forward current of 400 mA with a power dissipation of 450 mW at 25°C ambient temperature. Electrical characteristics include a breakdown voltage (BVR) ranging from 120 V to 170 V at 1.0 mA reverse current, and a maximum reverse leakage current of 100 nA at 90 V. The junction temperature range spans from -65°C to +200°C.
Feature Summary
- Hermetically sealed construction utilizing an epitaxial planar process for high-quality performance
- Controlled avalanche characteristics designed for specific switching applications
- Robust thermal management capabilities with a wide operating junction temperature range
Applications
- High-speed switching circuits requiring controlled avalanche behavior
- Protection stages within electronic systems needing robust reverse voltage handling
- Circuit designs compatible with the DO-35 axial leaded package form factor
Procurement Notes
Verify availability status carefully as this component is classified as End of Life. Confirm if existing inventory remains or if last-time buys are permitted. Check for any specific ordering suffixes required for plating options such as PBFREE or TIN/LEAD. Contact manufacturer support directly for technical data or alternate sourcing assistance since no official replacement part number is listed.
Selection Notes
Select this component only if the specific controlled avalanche characteristic and DO-35 package are mandatory for the design. Ensure the circuit operates within the 90 V reverse voltage limit and 450 mW power dissipation constraints. Consider the wide thermal range suitable for demanding environments. Evaluate alternative sources through manufacturer inquiry channels due to the discontinued status.
Part Context
The BAX12 belongs to the category of controlled avalanche diodes produced by Central Semiconductor Corp. It utilizes a DO-35 case configuration, which is a standard glass-encapsulated axial leaded package. This series is distinct from standard rectifier or Zener diodes due to its specific avalanche control engineering.
Replacement Considerations
No public confirmed substitute part numbers are available for the BAX12 BK or BAX12 TR variants. Customers are advised to submit inquiries via the manufacturer's online portal for potential alternate source recommendations.
