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The BAX16TR is a general-purpose silicon switching diode manufactured by onsemi. It features a single configuration housed in a DO-35 axial leaded package. Key electrical specifications include a peak reverse voltage of 150 V and a maximum forward current of 200 mA. The device supports a surge current of 4 A and exhibits a reverse current of 100 nA. Forward voltage is rated at 1.5 V, with a recovery time of 120 ns. Operating temperatures range from -65 °C to +175 °C.
Verify the specific ordering suffix to confirm packaging format, as the base part number may correspond to different tape and reel or cut tape configurations. Confirm RoHS compliance status through official datasheets prior to integration. Ensure the DO-35 through-hole package aligns with the target PCB footprint requirements.
Select this component for designs requiring high-temperature reliability and moderate current handling in a standard axial package. The 150 V rating suits low-voltage signal processing tasks. Consider the 120 ns recovery time when evaluating suitability for higher frequency switching applications compared to faster ultra-fast recovery alternatives.
This component belongs to the BAX16 series of general-purpose diodes produced by onsemi. It utilizes silicon technology within a traditional DO-35 glass passivated junction package. The product line targets cost-effective solutions for basic rectification and switching functions in consumer and industrial electronics.
Equivalent parts include BAX16TR_Q and variants from other manufacturers such as Fairchild or Texas Instruments offering identical 150V/200mA DO-35 specifications.