SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BAY80-TR is a silicon epitaxial planar small signal switching diode manufactured by Vishay Semiconductors. It features a DO-35 axial leaded package and is AEC-Q101 qualified for automotive reliability. The device supports a repetitive peak reverse voltage of 150 V and a continuous forward current of 250 mA. Key electrical characteristics include a maximum reverse recovery time of 50 ns, a breakdown voltage of 150 V at 100 µA, and a typical junction capacitance of 1.5 pF at 0 V reverse bias.
Verify the specific ordering suffix against official documentation to confirm packaging configuration. The datasheet indicates availability in tape and reel or ammopack formats. Ensure that the procurement specifications align with the required mechanical dimensions and thermal resistance parameters defined in the manufacturer's technical data sheet.
Select this component when a high-voltage small signal diode with fast switching capabilities is required. The DO-35 package provides through-hole mounting compatibility. Consider the 175 °C maximum junction temperature rating for thermal management. Verify that the 150 V reverse voltage rating meets the circuit requirements.
This component belongs to the Vishay BAY series of small signal switching diodes. The series includes variants designed for general-purpose applications with varying voltage and current ratings. The BAY80 specifically targets applications requiring robust performance under high reverse voltage conditions while maintaining low capacitance for signal integrity.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the DO-35 package, 150 V reverse voltage rating, and 50 ns reverse recovery time specifications.