BC 846PN H6727

Overview

The BC846PNH6727XTSA1 is a dual NPN bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It integrates two internally isolated transistors within a single SOT-363 surface-mount package. The device features a collector-emitter voltage of 65 V and a continuous collector current of 100 mA per transistor. Key electrical parameters include a DC current gain ranging from 200 to 450, a transition frequency of 250 MHz, and a power dissipation capacity of 250 mW. It operates within a temperature range of -65°C to +150°C.

Feature Summary

• Dual configuration with galvanic isolation between internal transistors
• High DC current gain for signal amplification
• Low collector-emitter saturation voltage
• Automotive qualification compliant

Applications

• Audio frequency input stages
• Driver applications
• General-purpose switching circuits

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact binning and packaging specifications. Confirm component availability status as distribution channels may list obsolete or end-of-life inventory. Ensure compatibility with existing PCB footprints before procurement.

Selection Notes

Select this component when a dual NPN configuration with high gain is required in a compact footprint. Compare the 250 MHz transition frequency against circuit bandwidth requirements. Verify that the 250 mW power dissipation rating accommodates thermal constraints in the target application environment.

Part Context

This part belongs to the BC846 series of small-signal NPN transistors. It shares core electrical characteristics with other variants like the BC846B but differs in packaging and specific manufacturer lot codes. The H6727 suffix denotes specific manufacturing and packaging details defined by Infineon.

Replacement Considerations

Direct substitutes include BC846SH6727XTSA1 and BC846BE6327HTSA1. Verify pinout compatibility and electrical parameter tolerances before substitution.