BC547C

Single Bipolar Transistors Overview

The BC547C is an NPN epitaxial silicon transistor from the onsemi BC546-BC550 series, designed for switching and amplifier applications. It features a collector-emitter voltage (VCEO) of 45 V, a maximum DC collector current (IC) of 100 mA, and a power dissipation (PC) of 500 mW. The device offers a high DC current gain (hFE) classification ranging from 420 to 800 at IC = 2 mA and VCE = 5 V. Key electrical characteristics include a collector-base voltage (VCBO) of 50 V, emitter-base voltage (VEBO) of 6 V, and a transition frequency (fT) of 300 MHz.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 45 V collector-emitter breakdown rating suitable for general-purpose circuits.
• High DC current gain (hFE) classification providing amplification performance up to 800.
• Low noise figure design optimized for signal processing and audio applications.
• Complementary pairing available within the BC546-BC550 series for push-pull configurations.

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Electronic switching applications
• Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required packing method, such as Bulk (BU), Ammo (TA), or Tape and Reel (TF). Confirm compliance with RoHS directives and lead frame material specifications during sourcing. Ensure the component meets environmental standards like REACH requirements before integration into final assemblies.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required for low-power amplification. The BC547C variant provides superior hFE compared to A or B grades. Consider thermal management for the TO-92 package due to the 500 mW dissipation limit. Verify compatibility with complementary PNP devices in the same series for balanced circuit designs.

Single Bipolar Transistors Part Context

This part belongs to the BC546 through BC550 family of NPN epitaxial silicon transistors manufactured by onsemi. The series utilizes a standard TO-92 three-lead plastic package. The BC547C specifically denotes the highest gain bin within the 45 V collector-emitter voltage subset of this lineup.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes within the same series include BC547A and BC547B, though they offer lower minimum hFE values. Complementary PNP replacements are BC557A, BC557B, and BC557C.

Single Bipolar Transistors FAQ

What is the DC current gain range for the BC547C?

The BC547C has a DC current gain (hFE) classification ranging from 420 to 800 under test conditions of IC = 2 mA and VCE = 5 V.

Is the BC547C compatible with the BC557 series?

Yes, the BC547 series is electrically complementary to the BC556, BC557, BC558, BC559, and BC560 PNP transistor series.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) for the BC547C is 45 V.