Single Bipolar Transistors BC548CTA product image

BC548CTA

$0.23
  • Description:TRANS NPN 30V 0.1A TO-92-3
  • Series:-

SKU:28af93aea52f Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BC548CTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC548CTA

  • Description:TRANS NPN 30V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT),Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC548CTA

BC548CTA

Single Bipolar Transistors Overview

The BC548CTA is an NPN epitaxial silicon transistor designed for switching and amplifier applications. It features a collector-emitter voltage of 30 V, a continuous collector current of 100 mA, and a power dissipation of 500 mW in a TO-92 package. The device belongs to the 'C' gain classification, providing a minimum DC current gain (hFE) of 420 at 2 mA and 5 V. It exhibits a transition frequency of 300 MHz and operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

  • Epitaxial silicon construction optimized for general-purpose switching and linear amplification tasks
  • High DC current gain classification ensures strong signal control with minimal base drive requirements
  • Low noise figure characteristics suitable for sensitive audio and radio frequency front-end circuits

Single Bipolar Transistors Applications

  • General-purpose small-signal amplification stages
  • Electronic switching circuits and logic interfaces
  • Audio pre-amplifier and driver stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging type and binning. Ensure compatibility with RoHS standards if required by your assembly process. Cross-reference datasheet revision numbers to validate electrical parameters before finalizing component selection for production.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is necessary to maximize circuit efficiency and reduce base drive complexity. The TO-92 through-hole package facilitates manual prototyping and standard PCB layouts. Consider the thermal limits and saturation voltages when designing for higher load currents or elevated ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the widely utilized BC546/BC547/BC548 series of NPN transistors. The 'C' suffix denotes a specific binning category for enhanced DC current gain compared to lower-grade variants. It serves as the complementary counterpart to the PNP BC558 device within the same family.

Single Bipolar Transistors Replacement Considerations

BC548BTA

Single Bipolar Transistors FAQ

What does the 'C' suffix indicate in the BC548CTA designation?

The 'C' suffix identifies the DC current gain (hFE) binning classification, specifying a minimum gain of 420 at 2 mA collector current.

Is the BC548CTA suitable for low-noise applications?

Yes, the datasheet specifies a typical noise figure of 2.0 dB, making it appropriate for low-noise amplifier designs.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter voltage (VCEO) rating is 30 V.

BC548CTABC548CTA
$0.23
Buy Now