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The BC69PAS-QX is a PNP bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a DFN-2020D-3 (SOT1061/HUSON3) surface-mount package. Key electrical parameters include a maximum collector current of 2 A, a collector-emitter voltage (VCEO) of 20 V, and a collector-base voltage (VCBO) of 32 V. The device features an emitter-base voltage (VEBO) of 5 V, a collector-emitter saturation voltage of 600 mV, and a power dissipation rating of 420 mW. It has a gain-bandwidth product (fT) of 140 MHz and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'QX' against official Nexperia documentation to confirm it denotes the automotive-grade AEC-Q101 qualification and the DFN-2020D-3 package. Ensure compatibility with the intended PCB footprint and thermal management requirements before procurement. Cross-reference the manufacturer part number with authorized distributor listings to confirm availability and authenticity.
Select this component for designs requiring high current switching or amplification in compact spaces. The exposed pad design facilitates efficient heat dissipation, making it suitable for applications where thermal performance is critical. Consider the 20 V voltage rating and 2 A current limit when designing the circuit to ensure operation remains within safe limits under all expected load conditions.
This component belongs to the BC69PA series of medium power transistors from Nexperia. It serves as the PNP complement to the BC68-25PA NPN transistor. The series is designed for general-purpose switching and amplification applications, offering a balance of high current handling and low profile packaging for modern electronic devices.
BC69PA/SOT1061/HUSON3
Yes, the BC69PAS-QX is AEC-Q101 qualified, ensuring it meets the reliability standards required for automotive electronics.
The maximum power dissipation (Pd) is 420 mW.