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The BC817DPN/DG/B2,115 is a dual bipolar junction transistor array manufactured by Nexperia USA Inc. It integrates one NPN and one PNP transistor within a compact SC-74 (SOT-457) surface-mount package. The device supports a maximum continuous collector current of 500 mA and features a collector-emitter breakdown voltage of 45 V. With a total power dissipation rating of 600 mW and a transition frequency up to 100 MHz, it is designed for general-purpose switching and amplification tasks in space-constrained electronic circuits.
Verify the specific suffix against official Nexperia documentation to confirm pinout orientation and binning specifications. Ensure the ordering code matches the required tape-and-reel packaging format for automated assembly processes. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Select this component when a matched NPN/PNP pair is required in a minimal footprint. Compare the 600 mW thermal limit against the application's duty cycle to ensure adequate heat dissipation. Verify that the 45 V voltage rating exceeds the maximum operating potential of the target circuit to prevent breakdown under transient conditions.
This part belongs to the BC817 series of small-signal bipolar transistors produced by Nexperia. The series includes various single and dual configurations optimized for low-cost, high-volume consumer electronics. The BC817DPN variant specifically addresses designs requiring complementary symmetry in a leadless SC-74 package.
Direct substitutes include BC817DPN,115 and BC817DPN,125 from Nexperia. Other manufacturers offer equivalent dual BJT arrays in SC-74 packages, but verification of hFE matching and pin compatibility is required.