SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC817K25WH6327XTSA1 is an NPN silicon audio frequency (AF) transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 45 V, a continuous collector current of 500 mA, and a peak collector current of 1000 mA. The device operates with a total power dissipation of 250 mW at a case temperature up to 130 °C. Electrical characteristics include a transition frequency of 170 MHz and a DC current gain ranging from 160 to 400 depending on the specific group. It is housed in a SOT-323 surface-mount package.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the part matches the exact datasheet specifications provided. Check for any end-of-life notices or obsolescence warnings prior to finalizing procurement decisions. Ensure compliance with RoHS requirements as stated in the documentation.
Select this component when designing circuits requiring an NPN transistor with a 45 V collector-emitter voltage rating and 500 mA continuous current capacity. Consider the SOT-323 package constraints for thermal management, noting the 250 mW power dissipation limit. Evaluate the hFE group requirements against the circuit's gain needs, as the device offers multiple gain bins.
This component belongs to the BC817K series of NPN silicon AF transistors produced by Infineon Technologies. The series includes variants with different voltage ratings and packaging options, such as SOT-23 and SOT-323. The BC817K25W specifically denotes the 45 V rating and SOT-323 package configuration within this product line.
Consult official Infineon documentation for confirmed substitute part numbers. Cross-reference electrical parameters such as VCEO, IC, and package type before considering alternatives.
The maximum collector-emitter voltage (VCEO) is 45 V.
It is available in the SOT-323 surface-mount package.
Yes, it is qualified according to the AEC-Q101 standard.