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Product Detailed Parameters
- Description：TRANS 2NPN 45V 500MA PG-SC74-6
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：500mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：330mW
- Frequency - Transition：170MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：PG-SC74-6
- Grade：-
- Qualification：-
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Overview
The BC817UE6327HTSA1 is a dual NPN silicon bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It is housed in a surface-mount SC-74-6 package and complies with AEC-Q100 automotive standards. The device supports a maximum DC collector current of 500 mA per element, with a total continuous collector current of 1000 mA. Key electrical ratings include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The power dissipation is rated at 330 mW, with a gain-bandwidth product (fT) of 170 MHz. The DC current gain (hFE) ranges from 160 to 400 at 100 mA and 1 V. Operating temperatures span from -65°C to +150°C.
Feature Summary
- Dual NPN configuration within a compact SC-74-6 surface-mount package for space-efficient circuit design.
- Automotive-grade qualification adhering to AEC-Q100 standards for enhanced reliability in vehicle electronics.
- High current handling capability with a total continuous collector current of 1000 mA across both elements.
Applications
- General-purpose switching and amplification in automotive electronic systems.
- Signal processing circuits requiring dual NPN transistor arrays.
- Low-power general-purpose applications compatible with surface-mount assembly processes.
Procurement Notes
Verify the specific ordering suffix and full part number against official Infineon documentation to ensure correct variant selection. Confirm that the component meets all required automotive qualification standards for the intended application environment. Check for any end-of-life notices or obsolescence status prior to finalizing procurement plans.
Selection Notes
Select this component when a dual NPN BJT array is required in an SC-74-6 package with automotive reliability. Ensure the design accommodates the 330 mW power dissipation limit and the 45 V collector-emitter voltage rating. Verify that the hFE range of 160 to 400 aligns with the circuit's gain requirements.
Part Context
This part belongs to the BC817 series of NPN silicon transistors produced by Infineon Technologies. The series includes various configurations such as single and dual arrays in packages like SOT-23 and SC-74. The BC817UE6327HTSA1 specifically denotes the dual array variant with automotive qualification and tape-and-reel packaging.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon resources for qualified alternatives if this component is obsolete or unavailable.
