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The onsemi BC846BDW1T1G is a dual general-purpose NPN transistor housed in the SOT-363/SC-88 surface-mount package. It features a collector-emitter voltage (VCEO) of 65 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 6.0 V. The device supports a continuous collector current (IC) of 100 mA dc with a total power dissipation (PD) of 380 mW at 25°C. Electrical characteristics include a minimum DC current gain (hFE) of 200 at IC = 10 mA and VCE = 5.0 V, and a current-gain bandwidth product (fT) of 100 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Ensure compliance with AEC-Q101 qualification and PPAP capability requirements if intended for automotive or controlled change environments. Confirm Pb-Free status and environmental compliance specifications prior to procurement.
Select this component for designs requiring dual NPN configurations in compact surface-mount layouts. Verify that the 65 V collector-emitter voltage and 100 mA continuous current ratings align with circuit load requirements. Consider the thermal resistance and power dissipation limits when designing for high ambient temperatures or restricted airflow conditions.
This part belongs to the BC846BDW1 series, which includes dual general-purpose NPN transistors. It shares the same SOT-363/SC-88 package and pinout structure as related variants like the BC847BDW1 and BC848CDW1, differentiated primarily by their voltage ratings and current gain specifications within the family.
SBC846BDW1T1G
Pin 1 is Emitter 2, Pin 2 is Base 2, Pin 3 is Collector 1, Pin 4 is Emitter 1, Pin 5 is Base 1, and Pin 6 is Collector 2.
Yes, devices with the 'S' prefix are AEC-Q101 qualified and PPAP capable, meeting requirements for automotive and other applications needing unique site and control change requirements.
The maximum junction temperature (TJ) is +150°C.