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The BC846BDW1T1H is a dual NPN bipolar junction transistor manufactured by onsemi, housed in the SOT-363 (SC-88) surface-mount package. It features two independent NPN transistors within a single compact component. Key electrical parameters include a maximum collector current of 100 mA and a collector-emitter voltage rating of 65 V. The device offers a DC current gain (hFE) ranging from 200 to 450, with a transition frequency of 100 MHz. Maximum power dissipation is specified at 380 mW, and it operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'H' against official onsemi documentation to confirm tape-and-reel specifications or marking codes. Ensure compatibility with standard SOT-363 footprints during procurement planning. Cross-reference manufacturer datasheets for exact packaging quantities and handling instructions.
Select this component when dual NPN functionality is required in a minimal footprint. Compare hFE ranges and voltage ratings against circuit requirements. Consider thermal management capabilities given the 380 mW dissipation limit in small packages. Verify automotive qualification needs against AEC-Q100 standards.
This part belongs to the BC846B series of dual NPN transistors. It shares functional similarities with other dual BJT packages but is distinct due to its specific onsemi manufacturing and automotive qualification. It serves as a compact alternative to discrete single transistors in dense PCB layouts.
Check for direct equivalents such as LBC846BDW1T1G from Leshan Radio Company. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure any replacement meets the same AEC-Q100 automotive grade if required.