BC846BDW1T1H

BC846BDW1T1H

$0.05
  • Description:TRANS 2NPN 65V 100MA SC88/SC70
  • Series:-

SKU:9497e5217604 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 65V 100MA SC88/SC70
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:380mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

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BC846BDW1T1H

Overview

The BC846BDW1T1H is a dual NPN bipolar junction transistor manufactured by onsemi, housed in the SOT-363 (SC-88) surface-mount package. It features two independent NPN transistors within a single compact component. Key electrical parameters include a maximum collector current of 100 mA and a collector-emitter voltage rating of 65 V. The device offers a DC current gain (hFE) ranging from 200 to 450, with a transition frequency of 100 MHz. Maximum power dissipation is specified at 380 mW, and it operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Dual NPN configuration for space-efficient circuit design
  • High DC current gain suitable for general-purpose amplification
  • Automotive-grade qualification ensuring reliability under varying conditions

Applications

  • General-purpose signal amplification
  • Switching applications in low-power circuits
  • Automotive electronics requiring AEC-Q100 qualified components

Procurement Notes

Verify the specific suffix 'H' against official onsemi documentation to confirm tape-and-reel specifications or marking codes. Ensure compatibility with standard SOT-363 footprints during procurement planning. Cross-reference manufacturer datasheets for exact packaging quantities and handling instructions.

Selection Notes

Select this component when dual NPN functionality is required in a minimal footprint. Compare hFE ranges and voltage ratings against circuit requirements. Consider thermal management capabilities given the 380 mW dissipation limit in small packages. Verify automotive qualification needs against AEC-Q100 standards.

Part Context

This part belongs to the BC846B series of dual NPN transistors. It shares functional similarities with other dual BJT packages but is distinct due to its specific onsemi manufacturing and automotive qualification. It serves as a compact alternative to discrete single transistors in dense PCB layouts.

Replacement Considerations

Check for direct equivalents such as LBC846BDW1T1G from Leshan Radio Company. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure any replacement meets the same AEC-Q100 automotive grade if required.

BC846BDW1T1HBC846BDW1T1H
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