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The BC846BS,115 is a dual NPN bipolar junction transistor (BJT) array manufactured by Nexperia. It utilizes silicon technology and is housed in a TSSOP-6 (SOT-363/SC-88) surface-mount package. Key electrical parameters include a maximum DC collector current of 100 mA, a collector-emitter voltage (VCEO) of 65 V, and a collector-base voltage (VCBO) of 80 V. The device features an emitter-base voltage (VEBO) of 6 V, a power dissipation (Pd) of 200 mW, and a transition frequency (fT) of 100 MHz. The minimum DC current gain (hFE) is specified at 290. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix '115' corresponds to the standard tape-and-reel packaging format when sourcing. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets prior to final procurement decisions.
Select this component for designs requiring two closely matched NPN transistors in a minimal footprint. The SOT-363 package reduces board space compared to discrete components. Ensure thermal management accommodates the 200 mW power dissipation limit within the operating temperature range.
This part belongs to the BC846 series of general-purpose NPN transistors. While the single-transistor BC846B uses a SOT-23 package, the BC846BS variant integrates two devices into the compact SOT-363 form factor. It serves as a drop-in replacement for standard double transistor configurations in space-constrained PCB layouts.
The BCM846BSX is a verified automotive-grade alternative offering similar dual NPN functionality in the same package type with AEC-Q101 qualification.