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The BC846BSHF is a dual NPN general-purpose transistor manufactured by Nexperia, housed in the SOT363 (SC-88) surface-mount plastic package. It features two fully isolated internal transistors with a collector-emitter voltage (VCEO) of 65 V and a continuous collector current (IC) of 100 mA per element. The device offers a DC current gain (hFE) range of 290 to 600 at IC = 2 mA and VCE = 5 V. Key electrical parameters include a collector-base voltage (VCBO) of 80 V, an emitter-base voltage (VEBO) of 6 V, and a power dissipation (Pd) of 200 mW. The transition frequency (fT) is specified at 100 MHz, with a maximum operating temperature of +150 °C.
Verify the specific suffix 'HSF' against official Nexperia documentation to confirm tape-and-reel packaging specifications and quantity per reel. Ensure the selected distributor provides traceability data consistent with AEC-Q101 qualification requirements for automotive-grade components.
Select this component when a dual NPN solution with high current gain matching is required in a minimal footprint. The SOT363 package allows for space-constrained designs compared to standard single transistors. Verify that the 200 mW total power dissipation rating accommodates the thermal constraints of the target PCB layout.
This part belongs to the BC846 series of general-purpose NPN transistors. The BS designation indicates the dual SOT363 package variant, while the H suffix specifies the high-gain binning. It serves as a drop-in replacement for other dual NPN transistors in similar packages, offering improved gain consistency for precision analog applications.
Direct pin-compatible alternatives include the BCM846BS from Nexperia. Engineers should verify that substitute parts maintain the same SOT363 footprint and meet the required hFE matching and isolation specifications for the specific circuit topology.