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The BC846DS,115 is a dual NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-363 (SC-88) surface-mount package with six terminals. The device supports a maximum DC collector current of 100 mA and offers a collector-emitter voltage rating of 65 V. Key electrical parameters include a collector-base voltage of 80 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 300 mW. The component features a gain-bandwidth product of 100 MHz and operates within a temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before finalizing procurement plans.
Select this component when a dual NPN topology is required in a small outline package. Ensure the design accounts for the 300 mW power dissipation limit and verify that the 100 mA current rating meets the circuit requirements without exceeding thermal constraints.
This part belongs to the Nexperia BC846 series of general-purpose NPN transistors. It serves as the dual-transistor variant within the SOT-363 package family, offering complementary functionality to single-transistor versions like the BC846W while maintaining similar electrical characteristics for signal processing tasks.
Direct substitutes include other dual NPN transistors in the SOT-363 package with matching voltage and current ratings, such as the BCM847DS,115, provided pin compatibility and gain bandwidth requirements are verified.