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The BC846PNH6327XTSA1 is a dual NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a SOT-363 (SC-88) surface-mount package with six pins, measuring 2 x 1.25 x 0.8 mm. The device contains two isolated NPN transistors per chip. Key electrical ratings include a maximum DC collector current of 100 mA and a maximum collector-emitter voltage of 80 V. Additional specifications feature a maximum collector-base voltage of 80 V, an emitter-base voltage of 6 V, and a power dissipation of 250 mW. The component operates within a temperature range of -65 °C to +150 °C and has a typical gain-bandwidth product of 250 MHz.
Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel packaging quantities and RoHS compliance status. Ensure that the procurement channel provides valid traceability for automotive-grade components. Cross-reference the manufacturer part number with authorized distributor databases to prevent counterfeit risks during sourcing.
Select this component when a dual NPN topology is required in a minimal surface-mount area. Compare the 80 V collector-emitter rating against circuit requirements to ensure adequate headroom. Evaluate the 250 mW power dissipation limit relative to thermal management constraints in the final assembly design.
This part belongs to the BC846 series of small-signal transistors from Infineon. It serves as a standard discrete semiconductor solution for low-power digital and analog switching tasks. The SOT-363 package allows for high-density PCB layouts compared to larger through-hole alternatives.
Publicly confirmed substitute part numbers are not available in the provided source material.