SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC846S-TP is a dual NPN bipolar junction transistor array manufactured by Micro Commercial Components. It integrates two independent NPN transistors within a single SOT-363 surface-mount package. The device supports a maximum collector current of 100mA and a collector-emitter breakdown voltage of 65V. Key electrical specifications include a DC current gain (hFE) minimum of 110 at 2mA and 5V, and a transition frequency of 100MHz. Power dissipation is rated at 200mW, with a saturation voltage of 300mV max at 5mA base and 100mA collector currents. The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Ensure the ordering quantity matches the available packaging formats such as tape and reel or cut tape. Confirm RoHS compliance status if required by the target assembly process.
Select this component when a dual NPN configuration is required in a small footprint. Compare hFE ranges and saturation voltages against alternative manufacturers like Diotec or Nexperia if specific gain bins are necessary. Verify that the 200mW power dissipation rating meets the thermal requirements of the final enclosure design.
This part belongs to the BC846 series of general-purpose NPN transistors. Variants such as BC846B-TP offer higher current gain, while single-transistor versions like BC846A-TP use different packages. The 'S' designation typically indicates the dual-transistor array format within the SOT-363 housing.
BC846S from Diotec Semiconductor is a direct functional equivalent with similar ratings but may differ in saturation voltage specifications. Check datasheets for exact hFE binning and thermal resistance differences before substitution.