BC846S

Overview

The BC846S is a dual NPN bipolar junction transistor (BJT) array manufactured by Diotec Semiconductor. It integrates two independent transistors within a single SOT-363 surface-mount package. The device supports a maximum collector-emitter voltage of 65 V and a continuous DC collector current of 100 mA per transistor. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 2 mA, a transition frequency (fT) of 100 MHz, and a total power dissipation rating of 250 mW. The component operates across a temperature range from -55°C to +150°C.

Feature Summary

• Dual NPN configuration in a compact SOT-363 package
• General-purpose signal processing and switching capability
• Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

• Signal processing circuits
• Electronic switching applications
• Amplification stages

Procurement Notes

Verify the specific ordering suffix when purchasing to confirm the intended quality grade. The standard version without a suffix represents industrial grade, while the -C suffix indicates commercial grade. Additionally, suffixes such as -Q or -AQ denote AEC-Q101 compliance or qualification for automotive environments. Ensure the selected variant matches the reliability requirements of the target application before finalizing procurement.

Selection Notes

Select the BC846S for designs requiring two matched NPN transistors in a space-constrained layout. The 65 V breakdown voltage and 100 mA current capacity suit general-purpose low-power tasks. Consider the -C suffix for cost-sensitive commercial products or the -Q/-AQ suffixes if automotive-grade standards are required. Verify that the thermal resistance and power dissipation limits align with the expected ambient operating conditions.

Part Context

This component belongs to the BC846 series of small-signal NPN transistors produced by Diotec Semiconductor. It shares similar electrical ratings with other members of the family but distinguishes itself through its dual-transistor architecture housed in the SOT-363 case outline. This configuration allows designers to replace discrete components with a single footprint, optimizing board space and assembly complexity.

Replacement Considerations

Direct replacements must match the SOT-363 package and dual NPN configuration. Verify that substitute parts meet the 65 V collector-emitter voltage and 100 mA current specifications. Check pinout compatibility to ensure correct alignment of emitters, bases, and collectors.