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The BC846S,115 is a dual NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a TSSOP-6 (SOT363/SC-88) surface-mount package. The device supports a maximum DC collector current of 100 mA and features a collector-emitter breakdown voltage of 65 V. Additional electrical ratings include a collector-base voltage of 80 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 300 mW. The component operates within a temperature range of -65°C to +150°C and offers a gain-bandwidth product of 100 MHz.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the requested quantity aligns with manufacturer minimum order requirements. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement orders.
Select this component when a dual NPN configuration is required in a small footprint. Compare performance metrics such as saturation voltage and current gain against single-transistor alternatives to determine suitability for specific circuit topologies. Verify thermal management requirements based on the 300 mW power dissipation limit.
This part belongs to the BC846 series of general-purpose NPN transistors. It serves as a compact alternative to discrete single transistors by integrating two matched units into one package. The SOT363 form factor is commonly used in portable electronics where space constraints are critical.
BC846SZ is a verified substitute offering identical electrical characteristics with a different factory packaging quantity.