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The BC846SE6327BTSA1 is a dual NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It integrates two galvanically isolated transistors within a single SOT-363 surface-mount package. The device features a maximum collector-emitter voltage of 65 V and a continuous collector current rating of 100 mA. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 450, a transition frequency (fT) of 250 MHz, and a total power dissipation capability of 250 mW. The component operates across a temperature range of -65 °C to +150 °C.
Verify the specific suffix E6327BTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure compliance with RoHS directives and automotive qualification standards if applicable to the target design environment before finalizing procurement orders.
Select this component when a dual NPN configuration is required in a minimal footprint. The SOT-363 package offers space efficiency compared to discrete solutions. Consider the 65 V breakdown voltage and 100 mA current limits to ensure adequate headroom for the intended application's operating conditions.
This part belongs to the BC846 series of small-signal NPN transistors. The 'S' designation typically indicates the SOT-363 package variant. The suffix E6327BTSA1 denotes specific manufacturing and packaging details defined by Infineon. This series is widely used in consumer electronics and industrial control systems requiring reliable small-signal amplification.
Compatible substitutes include other dual NPN transistors in SOT-363 packages such as the BC846DU or similar variants from other manufacturers, provided pinout compatibility and electrical ratings meet or exceed the original specifications.