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The BC846SH6327XTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies using silicon technology. It is housed in a surface-mount SOT-363-6 package and configured as a dual transistor. The device supports a maximum collector-emitter voltage of 65 V, a collector-base voltage of 80 V, and an emitter-base voltage of 6 V. It handles a continuous collector current of 100 mA with a total power dissipation of 250 mW. The component operates within a temperature range of -65 °C to +150 °C and features a gain-bandwidth product of 250 MHz.
Verify the specific ordering suffix against official Infineon documentation to confirm packaging details such as tape and reel specifications. Confirm RoHS compliance status through the manufacturer's datasheet before procurement. Ensure the component meets automotive qualification standards if required for the target application environment.
Select this component when a dual NPN configuration is required in a minimal footprint. Compare the 65 V breakdown voltage and 250 MHz bandwidth against circuit requirements. Evaluate the 250 mW power dissipation limit relative to thermal management capabilities on the printed circuit board.
This part belongs to the BC846 series of small-signal NPN transistors. It shares pinout compatibility with other variants in the family while offering specific electrical characteristics defined by the H6327XTSA1 designation. The SOT-363 package allows for high-density surface mount assembly.
Yes, the BC846S series is qualified according to AEC-Q101 standards.
The maximum operating junction temperature is +150 °C.
The package contains two galvanically isolated NPN transistors.