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Product Detailed Parameters
- Description：TRANS 2NPN 45V 100MA SOT-363
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：250mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The BC847AS_R1_00001 is a general-purpose NPN silicon bipolar junction transistor manufactured by Panjit International Inc. It is designed for surface-mount applications and housed in an SOT-23 package. The device features a maximum collector-emitter voltage (VCEO) of 45 V and a maximum collector-base voltage (VCBO) of 50 V. The emitter-base reverse voltage (VEBO) is rated at 5 V. Maximum DC collector current (IC) is specified at 100 mA, with a total power dissipation (Pd) of 200 mW. The transition frequency (fT) is 100 MHz. The component operates within a temperature range from -55°C to +150°C. Minimum DC current gain (hFE) is 200 at IC=2mA and VCE=5V.
Feature Summary
- Electrically isolated single NPN transistor structure
- Lead-free construction compliant with EU RoHS directives
- Halogen-free green molding compound
Applications
- General purpose amplifier circuits
- Switching applications in portable devices
- Hand-held computers and PDAs
Procurement Notes
Verify the specific suffix against official Panjit documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer datasheet prior to integration. Ensure ESD handling protocols are followed during assembly due to the small signal nature of the component.
Selection Notes
Select this component when a standard NPN configuration is required in an SOT-23 footprint. Verify that the 45V breakdown voltage meets circuit requirements. Check hFE binning if specific gain ranges are necessary for the application design.
Part Context
This part belongs to the BC847 series of small-signal transistors. It serves as a complementary or standalone NPN option within Panjit's discrete semiconductor portfolio. The series is widely used in consumer electronics and industrial control boards requiring low-power switching capabilities.
Replacement Considerations
BC847A_SOD123_R1_00001
FAQ
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is 45 V.
Is this component lead-free?
Yes, the device is lead-free and complies with EU RoHS 2002/95/EC directives.
What is the minimum DC current gain?
The minimum DC current gain (hFE) is 200, measured at IC=2mA and VCE=5V.
