BC847BDW1T3

BC847BDW1T3

$0.05
  • Description:TRANS 2NPN 45V 100MA SC88/SC70
  • Series:-

SKU:17e25c729b08 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 45V 100MA SC88/SC70
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:250mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

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BC847BDW1T3

Overview

The onsemi BC847BDW1T3G is a dual NPN general-purpose transistor housed in the SOT-363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA per device. The component has a total power dissipation rating of 380 mW at 25°C, with a junction temperature range of -55°C to +150°C. Electrical characteristics include a minimum DC current gain (hFE) of 200 at IC = 10 mA and VCE = 5 V, and a transition frequency (fT) of 100 MHz. The device is Pb-Free, Halogen/BFR Free, and RoHS compliant.

Feature Summary

  • Dual NPN configuration within a compact SOT-363 package for low-power surface mount applications
  • Qualified according to AEC-Q101 standards for automotive use
  • Pb-Free, Halogen-free, and RoHS compliant construction

Applications

  • General-purpose amplifier circuits
  • General-purpose switching applications
  • Automotive electronic systems requiring AEC-Q101 qualification

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging quantity and automotive qualification status. The 'T3' suffix indicates a 10,000-unit tape and reel configuration. Confirm that the 'G' suffix denotes Pb-Free compliance and check for any site-specific prefixes required for unique control change requirements.

Selection Notes

Select this component when a dual NPN transistor is required in an SC-88 footprint. Ensure the circuit design stays within the 45 V collector-emitter voltage limit and 100 mA continuous current rating. Consider the 380 mW thermal dissipation capability and verify that the hFE gain range meets the specific amplification or switching requirements of the application.

Part Context

This part belongs to the BC847BDW1 series, which includes dual NPN transistors designed for general-purpose use. It shares the same package and basic electrical limits as the BC846BDW1 and BC848CDW1, differentiated primarily by their respective breakdown voltages of 65 V, 45 V, and 30 V. The series is optimized for space-constrained surface-mount designs.

Replacement Considerations

Direct functional substitutes within the same family include the BC847BDW1T1G, which offers identical electrical specifications but is packaged in a 3,000-unit tape and reel instead of the 10,000-unit reel associated with the T3 suffix.

BC847BDW1T3BC847BDW1T3
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