BC847BDW1T3G

Overview

The onsemi BC847BDW1T3G is a dual general-purpose NPN transistor housed in the SOT-363 (SC-88) surface-mount package. It contains two isolated transistors with a maximum continuous collector current of 100 mA per device. The collector-emitter breakdown voltage is rated at 45 V, while the collector-base breakdown voltage reaches 50 V. The emitter-base breakdown voltage is specified at 6.0 V. Total device dissipation is 380 mW at 25°C ambient temperature. The minimum DC current gain (hFE) is 200 at IC = 10 mA and VCE = 5.0 V. The current-gain bandwidth product (fT) is 100 MHz. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

• Dual configuration providing two independent NPN transistors within a single compact SOT-363 package for space-constrained designs.
• AEC-Q101 qualified and PPAP capable when ordered with specific prefixes, supporting automotive and high-reliability applications.

Applications

• General purpose amplifier circuits
• Low power surface mount applications

Procurement Notes

Verify the ordering suffix 'T3G' corresponds to the 10,000-unit tape and reel quantity as listed in the official documentation. Confirm that the required application does not mandate the 'S' or 'NSV' prefix if AEC-Q101 qualification and PPAP capability are necessary for the project specifications.

Selection Notes

Select this component for designs requiring two matched NPN transistors in a minimal footprint. Ensure the circuit operates within the 45 V collector-emitter voltage limit and 100 mA current constraint. Consider the 380 mW total power dissipation and thermal resistance of 328°C/W when designing heat management strategies for the SOT-363 package.

Part Context

This part belongs to the BC847BDW1 series, which also includes variants like BC847BDW1T1G (3,000 units/reel). It shares the same electrical characteristics and pinout but differs in packaging quantity. The 'B' designation indicates a specific DC current gain binning range starting at a minimum hFE of 200.

Replacement Considerations

BC847BDW1T1G

FAQ

What is the pin configuration for the BC847BDW1T3G?

Pin 1 is Emitter 2, Pin 2 is Base 2, Pin 3 is Collector 1, Pin 4 is Emitter 1, Pin 5 is Base 1, and Pin 6 is Collector 2.

Is the BC847BDW1T3G AEC-Q101 qualified?

The standard BC847BDW1T3G is not explicitly marked with the S or NSV prefix in the ordering table. Devices with the S or NSV prefix are AEC-Q101 qualified and PPAP capable.

What is the maximum collector-base voltage?

The maximum collector-base voltage (VCBO) is 50 V.