BC847BPDW1T1G

Overview

The BC847BPDW1T1G is a dual general-purpose bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-363 surface-mount package. The device supports a maximum collector current of 100 mA and features a collector-emitter breakdown voltage of 45 V for both polarities. Key electrical parameters include a transition frequency of 100 MHz, a DC current gain ranging from 200 to 450 at 2 mA, and a power dissipation rating of 200 mW. It operates across a temperature range of -55°C to +150°C.

Feature Summary

• Complementary NPN/PNP configuration in a compact SOT-363 package
• Designed for low-power surface mount applications
• Suitable for general-purpose amplifier circuits

Applications

• General purpose amplifier applications
• Low power surface mount circuit designs

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the SOT-363 package dimensions match the target PCB footprint requirements. Ensure the ordering suffix corresponds to the desired tape and reel quantity specifications.

Selection Notes

Select this component when a complementary NPN/PNP pair is required in a minimal footprint. The 45 V rating and 100 mA current capacity suit standard low-voltage logic and signal processing tasks. Consider the 200 mW power dissipation limit for thermal management in dense layouts.

Part Context

This part belongs to the BC847 series of small-signal transistors. It is functionally similar to other dual BJT arrays like the BC846BPDW1T1G but offers higher voltage ratings. The SOT-363 package allows for space-efficient design in portable electronics compared to discrete single-transistor solutions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.