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The BC847BPDW1T3G is a dual general-purpose NPN/PNP bipolar junction transistor (BJT) manufactured by onsemi. It integrates complementary transistors in a single SOT-363 surface-mount package, designed for low-power applications. The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V for the NPN section. Key electrical parameters include a minimum DC current gain (hFE) of 200 and a transition frequency (fT) of 100 MHz. The component operates within a temperature range of -55°C to +150°C and is qualified under AEC-Q101 standards for automotive reliability.
Verify the specific suffix 'T3G' against official onsemi documentation to confirm reel quantity and tape specifications. Ensure the ordering part number matches the exact package variant required for the PCB footprint. Cross-reference the datasheet revision date to confirm compliance with current RoHS and halogen-free standards before finalizing procurement.
Select this component when a matched NPN/PNP pair is required in a minimal footprint. The SOT-363 package offers thermal and electrical symmetry beneficial for analog signal paths. Consider the 100 mA current limit and 45 V voltage rating to ensure operation remains within safe absolute maximum ratings during peak load conditions.
This part belongs to the BC847 series of small-signal transistors, widely used in general-purpose amplification and switching. The PDW1 designation indicates the SOT-363 dual-transistor configuration. The T3G suffix typically denotes specific packaging and environmental compliance attributes defined by onsemi for this product line.
Compatible substitutes include BC847BPDW1T1G and BC847BPDW1 from onsemi, which share identical pinouts and electrical characteristics. Other manufacturers offering SOT-363 dual BJT pairs with matching hFE and voltage ratings may serve as functional equivalents if verified against the original datasheet.