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The BC847BPN/DG/B4X is a dual bipolar junction transistor (BJT) from Nexperia, integrating one NPN and one PNP transistor within a single UMT6 surface-mount package. It provides a collector-emitter voltage (VCEO) of 45 V and a maximum DC collector current (IC) of 100 mA. The device features closely matched current gain characteristics and low collector capacitance. Total power dissipation is rated at 200 mW, with an operating temperature range spanning from -65 °C to +150 °C.
Verify the specific suffix DG/B4X against official Nexperia documentation to confirm tape-and-reel specifications and marking codes. Ensure compatibility with standard SMD assembly processes. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement orders.
Select this component when design constraints require a small footprint for dual-transistor functions. The UMT6 package offers a thin profile suitable for space-limited portable electronics. Verify that the 100 mA current rating and 45 V voltage limits meet the specific circuit requirements.
This part belongs to the BC847 series of general-purpose silicon transistors. The BC847BPN variant specifically combines NPN and PNP structures. The B4X suffix typically indicates a specific manufacturing date code or lot traceability marker rather than a functional variation.
Direct pin-compatible replacements include the BC847BPN/115 and BC847BPN/135. Verify that substitute parts maintain identical pinout configurations and thermal performance characteristics to ensure seamless integration into existing designs.