BC847BPN-QX

Overview

The BC847BPN-QX is a dual bipolar junction transistor (BJT) from Nexperia, integrating one NPN and one PNP transistor within a single SOT363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 45 V and a maximum DC collector current (IC) of 100 mA. The device exhibits a minimum DC current gain (hFE) of 200 at IC = 2 mA and VCE = 5 V. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a transition frequency (fT) of 100 MHz. Total power dissipation is rated at 200 mW, with an operating temperature range spanning from -65°C to +150°C.

Feature Summary

• Automotive qualified according to AEC-Q101 standards for enhanced reliability in vehicle electronics.
• Closely matched current gain between the integrated NPN and PNP transistors ensures balanced performance.
• Low collector capacitance supports high-speed switching and amplification applications.
• Compact SOT363 package reduces board space requirements compared to discrete component solutions.

Applications

• General-purpose switching circuits in automotive electronic control units.
• Signal amplification stages requiring complementary NPN/PNP pairs.
• Digital logic interface and level shifting applications.
• Battery management systems and portable device power regulation.

Procurement Notes

Verify the ordering suffix 'QX' corresponds to the specific tape-and-reel packaging configuration required for automated assembly. Confirm that the AEC-Q101 qualification status meets the specific reliability standards mandated by the target automotive application. Ensure compatibility with standard pick-and-place equipment due to the small SOT363 footprint.

Selection Notes

Select this component when a matched NPN/PNP pair is required in a minimal footprint for automotive or industrial environments. The BC847BPN-QX offers higher current gain than standard general-purpose variants, making it suitable for low-current amplification. Consider thermal constraints as the total power dissipation is limited to 200 mW shared between both transistors.

Part Context

This part belongs to the BC847 family of general-purpose silicon NPN/PNP transistors. The '-Q' suffix indicates automotive qualification under AEC-Q101, while 'PN' denotes the dual NPN/PNP configuration in the SOT363 package. It serves as a compact alternative to using two separate discrete transistors, simplifying PCB layout and reducing assembly complexity.

Replacement Considerations

Direct functional substitutes include the BC847BPN (non-automotive grade) for non-critical applications. For automotive replacements, verify availability of equivalent AEC-Q101 qualified dual transistors in compatible packages such as SOT363 or SC-88 from other manufacturers.