SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847BPN,165 is a general-purpose NPN/PNP transistor pair housed in the SOT363-3 (TSSOP6) surface-mount package. It features closely matched current gain with an hFE range of 200 to 450 at IC = 2 mA and VCE = 5 V. The device supports a maximum collector current of 100 mA per transistor and a total power dissipation of 300 mW at Tamb ≤ 25 °C. Key electrical limits include a collector-emitter voltage (VCEO) of 45 V, collector-base voltage (VCBO) of 50 V, and emitter-base voltage (VEBO) of 5 V. The transition frequency (fT) reaches 100 MHz.
Verify the ordering suffix against the manufacturer's latest documentation to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status through official Nexperia channels before finalizing procurement orders. Ensure the component matches the required SOT363-3 package dimensions for PCB footprint compatibility.
Select this component when space-constrained designs require dual transistors in a single ultra-small package. The closely matched gain characteristics make it suitable for differential amplifier stages. Verify that the 45 V rating and 100 mA current limit meet the specific circuit requirements for both NPN and PNP operations.
The BC847BPN belongs to the BC847 series of general-purpose transistors manufactured by Nexperia. This specific variant integrates both NPN and PNP types into one compact SOT363-3 package. It serves as a direct complement to the BC857BPN PNP/NPN pair, facilitating balanced circuit designs in minimal board space.
BC847BPN,115
The DC current gain (hFE) ranges from 200 to 450 when measured at IC = 2 mA and VCE = 5 V.
The maximum total power dissipation is 300 mW at an ambient temperature of 25 °C or lower.
No, the datasheet specifies that there is no mutual interference between the NPN and PNP transistors within the package.