BC847BS,115

Overview

The BC847BS,115 is an NPN/NPN general-purpose transistor pair housed in a TSSOP6 (SOT363-3) surface-mount package. It features closely matched current gain and low collector capacitance. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA per transistor. The DC current gain (hFE) ranges from 200 to 450 at IC = 2 mA and VCE = 5 V. Total power dissipation is limited to 300 mW for the device and 250 mW per transistor at Tamb ≤ 25 °C. Junction temperature reaches 150 °C.

Feature Summary

• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• No mutual interference between transistors

Applications

• General-purpose switching
• Amplification

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing site codes. Ensure compatibility with standard SOT363-3 footprints during design-in. Confirm RoHS compliance status through the manufacturer's latest product specification sheets before finalizing procurement plans.

Selection Notes

Select this component when board space reduction is critical due to its ultra-small SOT363-3 package. The closely matched hFE makes it suitable for differential amplifier circuits or current mirror applications requiring symmetry. Verify thermal constraints against the provided derating curves for high-temperature environments.

Part Context

This part belongs to the BC847 series of small-signal NPN transistors. The PNP/PNP complement is the BC857BS. The device replaces discrete dual transistors in smaller packages like SC-75 or SC-89, reducing component count and pick-and-place costs while maintaining general-purpose performance characteristics.

Replacement Considerations

BC857BS serves as the PNP/PNP complement.