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The BC847BS,135 is a dual NPN general-purpose transistor manufactured by Nexperia. It integrates two transistors in a TSSOP6 (SOT363-3) surface-mount package. Key electrical parameters include a collector-emitter voltage of 45 V and a continuous collector current of 100 mA per transistor. The DC current gain ranges from 200 to 450 at 2 mA. Total power dissipation is limited to 300 mW for the device. The transition frequency is specified at 100 MHz.
Verify the component marking code '1F' followed by the manufacturing site code against the official datasheet to confirm authenticity. Ensure the package type matches the SOT363-3 specification. Confirm that the supplier provides traceability documentation consistent with Nexperia's product data sheet requirements.
Select this component when space-constrained designs require two closely matched NPN transistors. The SOT363-3 package reduces board area compared to discrete SC-75 or SC-89 packages. Verify that the required collector-emitter voltage does not exceed 45 V and that the total power dissipation remains within the 300 mW limit under operating conditions.
This part belongs to the BC847 series of general-purpose NPN transistors. The PNP/PNP complement is the BC857BS. The BC847BS replaces two separate SC-75 or SC-89 packaged BISS transistors, reducing component count and mutual interference between the devices.
BC857BS is the PNP/PNP complement.