BC847BV,315

BC847BV,315

$0.37
  • Description:TRANS 2NPN 45V 100MA SOT-666
  • Series:-

SKU:64873e2afdf6 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 45V 100MA SOT-666
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:300mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-666
  • Grade:-
  • Qualification:-

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BC847BV,315

Overview

The BC847BV,315 is an NPN general-purpose double transistor manufactured by Nexperia USA Inc. It features a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device has a total power dissipation (Pd) of 300 mW and a transition frequency (fT) of 100 MHz. It is housed in an SOT-666 surface-mount package with dimensions of 1.6 mm x 1.2 mm x 0.55 mm. The minimum DC current gain (hFE) is 200 at IC=2 mA and VCE=5 V. The collector-emitter saturation voltage (VCEsat) is 300 mV max at IC=5 mA and IB=0.5 mA. Operating temperature range extends up to +150 °C junction temperature.

Feature Summary

  • Dual NPN configuration in an ultra-thin flat lead plastic package for reduced board space
  • Excellent coplanarity due to straight leads facilitating automated assembly
  • Low collector capacitance and improved thermal behavior from flat lead design

Applications

  • General purpose switching circuits
  • General purpose amplification stages
  • Replacement for two SC-75/SC-89 packaged BISS transistors

Procurement Notes

Verify the specific suffix ,315 corresponds to the SOT-666 tape-and-reel packaging format. Confirm RoHS compliance status and AEC-Q101 qualification requirements against the latest manufacturer datasheet revision before finalizing procurement specifications.

Selection Notes

Select this component when dual NPN functionality is required in a minimal footprint. The SOT-666 package offers superior thermal performance compared to standard SOT-363 alternatives. Ensure circuit designs account for the 300 mW total power dissipation limit under expected operating conditions.

Part Context

This part belongs to the BC847 series of general-purpose NPN transistors. It serves as the dual-transistor counterpart to single units like the BC847B. The BV designation indicates the specific gain binning and electrical characteristics defined by Nexperia for this variant within the broader product family.

Replacement Considerations

Direct substitutes include other manufacturers' dual NPN transistors in SOT-666 or SOT-563 packages with matching 45V/100mA ratings. Verify pinout compatibility and hFE gain ranges before substitution.

BC847BV,315BC847BV,315
$0.37
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