SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847BV,315 is an NPN general-purpose double transistor manufactured by Nexperia USA Inc. It features a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device has a total power dissipation (Pd) of 300 mW and a transition frequency (fT) of 100 MHz. It is housed in an SOT-666 surface-mount package with dimensions of 1.6 mm x 1.2 mm x 0.55 mm. The minimum DC current gain (hFE) is 200 at IC=2 mA and VCE=5 V. The collector-emitter saturation voltage (VCEsat) is 300 mV max at IC=5 mA and IB=0.5 mA. Operating temperature range extends up to +150 °C junction temperature.
Verify the specific suffix ,315 corresponds to the SOT-666 tape-and-reel packaging format. Confirm RoHS compliance status and AEC-Q101 qualification requirements against the latest manufacturer datasheet revision before finalizing procurement specifications.
Select this component when dual NPN functionality is required in a minimal footprint. The SOT-666 package offers superior thermal performance compared to standard SOT-363 alternatives. Ensure circuit designs account for the 300 mW total power dissipation limit under expected operating conditions.
This part belongs to the BC847 series of general-purpose NPN transistors. It serves as the dual-transistor counterpart to single units like the BC847B. The BV designation indicates the specific gain binning and electrical characteristics defined by Nexperia for this variant within the broader product family.
Direct substitutes include other manufacturers' dual NPN transistors in SOT-666 or SOT-563 packages with matching 45V/100mA ratings. Verify pinout compatibility and hFE gain ranges before substitution.