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The onsemi BC847CDXV6T1H is a dual NPN bipolar junction transistor array housed in an SOT-563 surface-mount package. It features a collector-emitter breakdown voltage of 30 V and a maximum continuous collector current of 100 mA per element. The device has a maximum power dissipation of 500 mW and a transition frequency of 100 MHz. DC current gain (hFE) is specified with a minimum value of 420 at 2 mA and 5 V. The operating junction temperature range extends from -55°C to 150°C.
Verify the specific suffix against official manufacturer documentation, as ordering codes may indicate variations in tape-and-reel specifications or packaging details. Confirm component status, as availability can change. Ensure the source document explicitly identifies the manufacturer as onsemi and matches the part number exactly to avoid substitution errors.
Select this component when a dual NPN array is required in an SOT-563 package. Compare hFE ranges and breakdown voltages against circuit requirements. Consider the 500 mW power dissipation limit and thermal management needs. Verify compatibility with existing PCB footprints designed for SOT-563 or SOT-666 packages.
This part belongs to the BC847 series of small-signal NPN transistors. It shares functional similarities with other members of the family but differs in packaging and specific electrical tolerances. The SOT-563 package allows for higher density compared to standard SOT-23 single transistors.
Publicly confirmed substitute part numbers are not available in the provided data. Consult official cross-reference guides for compatible alternatives.