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The BC847CS_R1_00001 is a dual surface-mount NPN/PNP complementary transistor pair in the SOT-363 package. It features a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device has a total power dissipation (Ptot) of 150 mW at 25°C, with a junction temperature range from -55°C to +150°C. DC current gain (hFE) ranges from 200 to 450 at IC=2mA, VCE=5V. Transition frequency (fT) is 100 MHz at IC=0.1mA, VCE=0.5V. Collector-base breakdown voltage (VCBO) is 50 V, and emitter-base breakdown voltage (VEBO) is 5 V.
Verify the specific ordering suffix against official Panjit documentation to confirm packaging orientation and tape-and-reel specifications. Ensure compliance requirements match project needs by checking the datasheet for RoHS and halogen-free certifications. Confirm the manufacturer part number matches the exact component variant required for the design.
Select this component when a compact dual complementary transistor solution is needed for low-power signal amplification. The SOT-363 package provides a small footprint suitable for space-constrained designs. Verify that the 45V voltage rating and 100mA current limits meet the circuit requirements before finalizing the selection.
This component belongs to the BC847 series of general-purpose NPN transistors manufactured by Panjit International Inc. The 'C' designation indicates a specific DC current gain banding range. The 'S' suffix denotes the SOT-363 dual complementary configuration containing both NPN and PNP elements within a single surface-mount package.
BC847BPN_R1_00001
The marking code for the BC847CS is '47C'.
The thermal resistance junction-to-ambient (RθJA) is 655 °C/W when mounted on an FR-4 board.
No, the datasheet explicitly states that these products are not designed or authorized for equipment requiring high reliability or relating to human life, such as automotive machinery.