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The BC847PN-7-F is a dual bipolar junction transistor (BJT) array manufactured by Diodes Incorporated. It integrates two internally isolated transistors, one NPN and one PNP, within a single SOT-363 surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. It handles a continuous DC collector current of 100 mA with a power dissipation rating of 200 mW. The minimum DC current gain (hFE) is specified at 200. The transition frequency (fT) reaches 300 MHz, and the unit operates reliably across a temperature range from -65°C to +150°C.
Verify component authenticity through authorized Diodes Incorporated distributors or certified supply chain partners. Request official datasheets and RoHS compliance documentation prior to integration. Confirm that the SOT-363 package orientation matches the target PCB footprint design. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain solderability during assembly processes.
Select this component when a design requires matched NPN/PNP pairs in a minimal footprint. The 45 V rating suits low-voltage digital and analog interfaces. Consider the 200 mW power limit for thermal management in dense layouts. Verify that the 100 mA current capacity meets load requirements without exceeding saturation limits.
This part belongs to the BC847P series of small-signal transistors designed for general-purpose use. It complements other variants like the BC847C-7-F single NPN transistor. The suffix '-7-F' indicates specific packaging and environmental compliance attributes defined by the manufacturer. It serves as a standard solution for replacing discrete dual-transistor configurations in modern electronics.
Compatible substitutes include the BC847BDW1T1G and MMDT5551-7-F. Verify pinout compatibility and voltage ratings before substitution. Ensure the alternative device meets the same AEC-Q101 automotive qualification if required for the application.