BC847S

$0.15

Description：TRANS 2NPN 45V 100MA SOT-363
Series：-

SKU:6c628043bfff Category: Bipolar Transistor Arrays Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN 45V 100MA SOT-363
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 NPN (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：45V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
Power - Max：250mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-VSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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BC847S

Overview

The Diotec Semiconductor BC847S is a dual NPN bipolar junction transistor (BJT) array housed in an SOT-363 surface-mount package. It features a collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V, with a maximum DC collector current (IC) of 100 mA. The device provides a DC current gain (hFE) ranging from 200 to 450 at IC = 2 mA and VCE = 5 V. Power dissipation is rated at 250 mW for industrial grades and 200 mW for commercial variants. Key electrical characteristics include a collector-emitter saturation voltage of 250 mV at IC = 10 mA and a transition frequency (fT) of 100 MHz.

Feature Summary

Dual transistors integrated into a single compact package to reduce board space
Low collector-emitter saturation voltage for efficient switching performance
Closely matched current gain between internal elements for signal processing applications

Applications

Signal processing circuits
General-purpose switching applications
Amplification stages

Procurement Notes

Verify the specific suffix to confirm the operating grade. The absence of a suffix indicates an industrial-grade component, while the -C suffix denotes a commercial-grade version. Ensure that the selected variant meets the required reliability standards for the intended application environment before finalizing procurement.

Selection Notes

Select the BC847S when a dual NPN configuration is required within a small footprint. Consider the -Q or -AQ suffixes if automotive qualification under AEC-Q101 is necessary. Evaluate the thermal resistance and power dissipation limits relative to the ambient temperature conditions of the target design.

Part Context

This component belongs to the BC846/BC847 series of general-purpose NPN transistors. While the BC846S variant offers higher voltage ratings (65 V), the BC847S is optimized for lower voltage applications with a 45 V rating. Both share similar packaging and current handling capabilities, allowing for flexible design choices based on voltage requirements.