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The BC847SE6327BTSA1 is a small-signal NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It operates with a continuous collector current of 100 mA and withstands a collector-emitter voltage of 45 V. The device features a DC current gain (hFE) ranging from 200 to 450, ensuring consistent amplification performance. It is housed in the SOT-323 surface-mount package, which supports a maximum power dissipation of 220 mW. The component is qualified for automotive applications under AEC-Q101 standards and functions within an operating temperature range of -55°C to +150°C.
Verify the specific suffix BTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and quantity per reel. Ensure the E6327 designation aligns with current RoHS compliance requirements and halogen-free manufacturing standards before finalizing procurement orders.
Select this component when a high-gain NPN transistor is required for low-current applications. The 45V rating suits general signal processing tasks. Verify that the SOT-323 footprint matches the PCB layout constraints and that the thermal management capabilities meet the system's power dissipation limits during operation.
This part belongs to the BC847 series of small-signal transistors, widely used for general-purpose amplification and switching. The 'S' variant typically denotes a specific hFE binning category, while the E6327 suffix indicates environmental compliance and packaging format. It serves as a standard replacement for legacy discrete NPN transistors in modern compact electronic assemblies.
Direct substitutes include other BC847B or BC847C variants from different manufacturers if gain ranges overlap. Verify pinout compatibility and thermal resistance values when cross-referencing with generic NPN transistors like the 2N3904 in through-hole conversions.