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The BC847SH6730XTMA1 is a dual NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-363-6 package and utilizes silicon technology. The device features a maximum DC collector current of 200 mA and a continuous collector current of 100 mA. Key electrical parameters include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 6 V. The component has a power dissipation rating of 250 mW, a transition frequency (fT) of 250 MHz, and a saturation voltage of 200 mV. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix XTMA1 against official Infineon documentation to confirm tape-and-reel packaging and binning details. Confirm RoHS compliance status through the manufacturer's material declaration. Check for end-of-life notices or obsolescence warnings directly from the supplier before finalizing procurement plans.
Select this component when a dual NPN BJT is required in an SOT-363 footprint. Ensure the design accommodates the 45 V collector-emitter voltage limit. Verify that the 250 mW power dissipation rating is sufficient for the intended thermal environment and duty cycle.
This part belongs to the BC847 series of small-signal transistors. It shares the same physical package and basic electrical characteristics as other variants in the family, differing primarily in manufacturing lot codes and specific binning configurations defined by the manufacturer's internal coding system.
Direct replacements include BC847SH6433XTMA1 and BC847S variants with identical SOT-363 packaging and NPN polarity. Verify pinout compatibility and ensure equivalent voltage and current ratings are met before substitution.