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Product Detailed Parameters
- Description：TRANS 2PNP 65V 100MA SC88/SC70
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：65V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：380mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：-
- Qualification：-
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Overview
The onsemi BC856BDW1T3 is a dual general-purpose PNP transistor housed in the SOT-363/SC-88 surface-mount package. It contains two independent transistors designed for low-power applications. Key electrical parameters include a collector-emitter voltage (VCEO) of -65 V, a collector-base voltage (VCBO) of -80 V, and an emitter-base voltage (VEBO) of -5.0 V. The continuous collector current is rated at -100 mA with a peak current of -200 mA. Total device dissipation is 380 mW on an FR-5 board. DC current gain (hFE) ranges from 220 to 475 at IC = -10 mA, and the current-gain bandwidth product (fT) is 100 MHz.
Feature Summary
- Dual PNP configuration within a compact SC-88 footprint
- High breakdown voltage capability up to -80 V
- Lead-free and halogen-free construction compliant with RoHS standards
Applications
- General purpose amplifier circuits
- Low power surface mount applications
- Switching applications requiring dual PNP control
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm tape and reel specifications. Confirm that the component meets AEC-Q101 qualification requirements if automotive application compliance is necessary. Ensure the Pb-Free status aligns with project environmental regulations.
Selection Notes
Select this component when a dual PNP solution is required in a minimal footprint. Compare the -65 V VCEO rating against circuit voltage requirements. Evaluate the hFE range of 220–475 for amplification needs. Consider the 380 mW thermal dissipation limit for power management in dense layouts.
Part Context
This part belongs to the BC856BDW1T1 series, which includes variants like BC856BDW1T1G and BC857BDW1T1G. These devices share the same SOT-363 package and general design philosophy but differ in specific gain and voltage characteristics. The series is intended for cost-effective, high-volume surface mount production.
Replacement Considerations
Direct substitutes include other dual PNP transistors in the SOT-363 package from manufacturers such as NXP or ROHM. Verify pinout compatibility and ensure equivalent VCEO and hFE ratings before substitution.
