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The BC856BSHE3-TP is a dual PNP bipolar junction transistor manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in an SOT-363-6 surface-mount package. The device features a collector-emitter maximum voltage (VCEO) of 65 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 5 V. It supports a continuous collector current of 100 mA with a power dissipation rating of 200 mW. The component operates within a temperature range of -55°C to +150°C and has a gain-bandwidth product (fT) of 100 MHz.
Verify the specific ordering suffix HE3-TP against the manufacturer's official documentation to confirm lead-free compliance and tape-and-reel packaging specifications. Ensure the requested quantity matches the factory pack size of 3000 units or verify cut-tape availability through authorized distributors. Cross-reference the Mouser part number 833-BC856BSHE3-TP for accurate sourcing channels.
Select this component when a dual PNP transistor with high voltage tolerance up to 80 V is required in a small outline package. The 100 mA continuous current rating suits moderate load applications. Verify that the 200 mW power dissipation limit aligns with the thermal management capabilities of the target PCB layout and operating environment.
This part belongs to the BC856B series of dual PNP transistors produced by Micro Commercial Components. It shares the core electrical characteristics of the BC856B family but includes specific manufacturing attributes indicated by the HE3-TP suffix, such as environmental compliance and specific packaging formats designed for automated surface-mount assembly processes.
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official cross-reference guides or manufacturer datasheets to identify compatible alternatives based on pinout compatibility and electrical parameter margins.