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The BC856S-AQ is a dual PNP bipolar junction transistor (BJT) array manufactured by Diotec Semiconductor. It features a maximum collector-emitter voltage of 65V and a continuous collector current of 100mA per transistor. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 250mW of power. Key electrical characteristics include a minimum DC current gain (hFE) of 220 at 2mA and 5V, a transition frequency of 100MHz, and a maximum saturation voltage of 650mV at 5mA base and 100mA collector currents. The component is housed in a compact SOT-363 surface-mount package.
Verify the specific suffix against official manufacturer documentation to confirm automotive qualification status. Ensure that ordering information matches the exact part number required for compliance. Cross-reference datasheets for precise electrical limits before integration. Confirm packaging details align with production requirements.
Select this component when dual PNP functionality is required in a minimal footprint. The 65V rating suits low-voltage control logic. Verify that the 100mA current limit meets circuit demands. Consider the SOT-363 package constraints for PCB layout. Compare hFE specifications against alternative discrete transistors if higher gain is needed.
This part belongs to the BC85x series of dual transistors from Diotec Semiconductor. It shares the physical SOT-363 housing with variants like the BC857S and BC856S. The primary distinction lies in its voltage ratings and automotive certification. It serves as a compact solution for replacing multiple discrete components in space-constrained designs.
BC856S is a parameter-equivalent non-automotive alternative.