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The BC857BLP4Q-7 is a single PNP bipolar junction transistor manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device operates with a transition frequency of 100 MHz and a power dissipation rating of 250 mW. It is housed in an X2-DFN1006-3 surface-mount package, measuring 1.0 mm by 0.6 mm with a height of 0.5 mm. The component supports an operating temperature range from -55°C to +150°C and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix 'Q' indicates AEC-Q101 automotive qualification status against the official Diodes Incorporated datasheet. Confirm the package designation matches the X2-DFN1006-3 physical dimensions. Ensure environmental compliance declarations align with current regulatory requirements before integration into production designs.
Select this component when automotive reliability certification is mandatory for the target application. Choose this part over standard commercial variants if strict size constraints require a footprint smaller than SOT-23. Verify that the 250 mW power dissipation rating accommodates the thermal management capabilities of the final assembly environment.
This device belongs to the BC857B series of PNP small-signal transistors produced by Diodes Incorporated. The series provides complementary NPN options within the same family. The Q suffix typically denotes automotive-grade qualification, distinguishing it from standard commercial versions while maintaining identical electrical performance characteristics for general-purpose use.
Direct substitutes include other AEC-Q101 qualified PNP transistors in the X2-DFN1006-3 package. Verify pinout compatibility and saturation voltage specifications when replacing with equivalent parts from other manufacturers.