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The BC857BS-7-F is a dual PNP bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-363-6 surface-mount package. The device supports a maximum DC collector current of 100 mA with a collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The emitter-base voltage (VEBO) is rated at 5 V, while the collector-emitter saturation voltage is 400 mV. Power dissipation is limited to 200 mW, and the gain-bandwidth product (fT) reaches 100 MHz. The minimum DC current gain (hFE) is 220 at -2 mA and -5 V. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' to confirm the reel packaging format and RoHS compliance status directly from the manufacturer's documentation. Ensure the component matches the SOT-363-6 footprint requirements for your PCB layout. Cross-reference the datasheet revision date to confirm technical specifications align with your design constraints before finalizing procurement orders.
Select this component when a dual PNP configuration is required in a minimal footprint. Compare the 200 mW power dissipation limit against thermal management capabilities if multiple units operate simultaneously. Verify that the 100 mA current rating meets load requirements. Consider the BC847BS-7-F as the complementary NPN counterpart if push-pull stages are needed.
This part belongs to the BC857B series of small signal transistors. It shares the same pinout and general electrical characteristics as other dual PNP variants but is distinguished by its specific packaging and manufacturing batch codes. It serves as a direct replacement for legacy dual PNP components in similar surface-mount applications.
The BC847BS-7-F is the complementary NPN dual transistor within the same family. For single PNP replacements, consider the BC857BT-7-F or BC857CT-7-F depending on package preference. Verify pin compatibility before substituting with generic dual PNP parts.