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The BC857BS-AU_R1_000A1 is a PNP general-purpose bipolar junction transistor manufactured by Panjit International Inc. It operates with a collector current of -100 mA and features a collector-emitter voltage (VCEO) of -45 V. The device is housed in an SOT-23 surface-mount package and supports a maximum power dissipation of 330 mW. It is qualified under the AEC-Q101 automotive standard, ensuring reliability for demanding environments. The component utilizes silicon technology and functions within a temperature range of -55°C to +150°C.
Verify the specific suffix 'S' against official datasheets to confirm the DC current gain (hFE) binning classification. Confirm that the ordering code matches the exact electrical parameters required for the design. Ensure compatibility with the SOT-23 footprint during procurement planning.
Select this component when a PNP transistor with -45 V breakdown and -100 mA continuous current is required. The AEC-Q101 qualification makes it suitable for automotive designs. Compare the hFE binning requirements of the 'S' suffix against other variants like 'B' or 'C' to ensure proper biasing in the target circuit.
This part belongs to the BC857 series of PNP general-purpose transistors from Panjit. The series includes complementary NPN devices such as the BC847. These components are widely used in consumer electronics and industrial equipment due to their small form factor and reliable performance in low-power signal processing tasks.
Check for direct equivalents such as the BC857B or BC857C if the specific gain binning differs. Verify pinout compatibility with the SOT-23-3 package before substitution.